2009/12/ 05 ver.1 page 1 spn2622 dual n-channel enhancement mode mosfet description applications the spn2622 is the dual n-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( sot-23-6l ) part marking ? 20v/4.0a,r ds(on) = 80m ? @v gs =4.5v ? 20v/3.4a,r ds(on) = 100m ? @v gs =2.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-6l package design
2009/12/ 05 ver.1 page 2 spn2622 dual n-channel enhancement mode mosfet pin description pin symbol description 1 g1 gate 1 2 s2 source 2 3 g2 gate 2 4 d2 drain 2 5 s1 source 1 6 d1 drain1 ordering information part number package part marking SPN2622S26RGB sot-23-6l 22yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN2622S26RGB : tape reel ; pb ? free; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 20 v gate ?source voltage v gss 12 v t a =25 4.0 continuous drain current(t j =150 ) t a =70 i d 3.4 a pulsed drain current i dm 10 a continuous source current(diode conduction) i s 1.6 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 105 /w
2009/12/ 05 ver.1 page 3 spn2622 dual n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.4 1.0 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 5 ua on-state drain current i d(on) v ds Q 5v,v gs =4.5v 6 a v gs =4.5v,i d =4.0a 0.060 0.080 drain-source on-resistance r ds(on) v gs =2.5v,i d =3.4a 0.075 0.100 ? forward transconductance gfs v ds =5v,i d =-3.6a 10 s diode forward voltage v sd i s =1.6a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 4.8 8 gate-source charge q gs 1.0 gate-drain charge q gd v ds =6v,v gs =4.5v i d 2.8a 1.0 nc input capacitance c iss 485 output capacitance c oss 85 reverse transfer capacitance c rss v ds =6v,v gs =0v f=1mhz 40 pf t d(on) 8 14 turn-on time t r 12 18 t d(off) 30 35 turn-off time t f v dd =6v,r l =6 ? i d 1.0a,v gen =4.5v r g =6 ? 12 16 ns typical characteristics
2009/12/ 05 ver.1 page 4 spn2622 dual n-channel enhancement mode mosfet typical characteristics
2009/12/ 05 ver.1 page 5 spn2622 dual n-channel enhancement mode mosfet typical characteristics
2009/12/ 05 ver.1 page 6 spn2622 dual n-channel enhancement mode mosfet sot-23-6l package outline
2009/12/ 05 ver.1 page 7 spn2622 dual n-channel enhancement mode mosfet
2009/12/ 05 ver.1 page 8 spn2622 dual n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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